| 1. | The world of modern electronics is also full of light - emitting materials
现代电子产品的世界里，也同样充斥著发光的物质。 |
| 2. | Active emitting material
放射活性材料 |
| 3. | The study of si - base light - emitting materials has made great progress in recent years
硅基发光材料的研究近年来已取得重要进展。 |
| 4. | One is to improve the luminous efficiency of emitting materials ; the other is to mend the structure of device to realize high exterior efficiency , our work content of the dissertation is belonging to the later
对于发光器件,提高发光效率人们首先想到的是改进材料。然而,在改进材料及更新发光原理的同时,有另外一种独特的方法正在悄悄的提高着器件的出光效率。 |
| 5. | Abstract : this paper reviewed the structure , the materials , the emitting mechanism of blue and blue - green electroluminescent thin film cells using polymer as emitting materials . recent development , lack , tendency of studies about above cells was also narrated
文摘:概述了电致发射蓝光和蓝绿光的电致发光薄膜器件的结构、材料、发光机理、目前研究的状况、出现的问题以及研究的发展趋势。 |
| 6. | To sum up , two types of model have priority in explaining the origin and mechanism of visible pl in si - base light - emitting materials . but in view of the reported results , the properties of materials are badly influenced by preparation process
归纳起来，其发光机制以量子限制效应和发光中心两种模型为主；但就报道的结果而言，材料的发光特性都严重地依赖于样品的制备工艺过程，经不同的工艺过程制备的样品，其发光特性差别甚大。 |
| 7. | Aln is an important compound semiconductor material with wide band - gap , which has wurtzite structure too . because of their many excellent physical properties , aln thin films were applied in blue - uv emitting materials , epitaxy buffer layer , soi material and saw device with ghz band
Aln具有许多优异的物理性能，在蓝光、紫外发光材料及热释电材料、外延过渡层、 soi材料的绝缘埋层和ghz级声表面波器件等方面有着重要的应用。 |
| 8. | Spatial distribution and time scales of atmospheric diffusion over beijing area are revealed by means of a random walk simulation model and practical meteorological data with a specified emission source from the city . results show a southward transport pattern for wintertime while a northwest transport of pollutants in summer . the area is the least evidently influenced by the emission source in spring , while the largest in autumn . the time spent for instantly emitted material removing from the model domain varies from winter - spring to summer - autumn . the former was shorter one of less than 20 hours ; the latter was longer one of approximately 30 hours . distribution of occurrence probability for different removal times was not symmetry . reducing slowly at the end of longer removal time , probability exists for pollutants remaining in this area a long time
结果表明，冬季示踪物偏南夏季偏西北的输送明显春季扩散影响范围最小秋季最大。示踪物从200km200km模式区域输出的平均时间去除时间明显分为冬春季和夏秋季两组，前者较小，平均在20h以下，后者较大，平均约30h 。不同去除时间出现的频率分布是非对称的，在长去除时间一侧，出现频率下降缓慢，显示污染物有在该区域内长时间滞留的可能。 |
| 9. | Silicon ( si ) is the leading material of microelectronic devices , but the nature of indirect band gap of si hinders its applications in integrated optoelectronics . to develop si - based optoelectronic integration by coupling the mature technology of si microelectronic integration with si - based light - emitting material will essentially meet the increasing demand of the great progress in the information technology
硅是微电子器件的主要材料，但硅的间接能隙特性严重制约了其在光电子领域的应用，如果能在硅基材料的基础上制备发光材料，就可利用已有成熟的硅集成技术发展硅光电子集成，从而有可能完全改变信息技术的面貌。 |
| 10. | In this thesis , we demonstrate the study of si - based light emitting materials and its importance in si - based photonics integration . we discussed mainly the gain , differential gain , threshold current of si - based quantum - dot laser and the dependence of threshold current on temperature from discrete energy level of three - dimension confined quantum - dot and state density distribution of 5 - function
本文阐述了si基光发射材料的研究进展及它在硅基光电子集成中的重要地位，从三维受限量子点的分立能级和函数状的态密度分布入手，着重讨论了si基量子点激光器的增益、微分增益、阈值电流及阈值电流的温度特性。 |
